Irf740 Mosfet



Category:Electronic Components
No Comments
Hi Friends! I welcome you on board. Thank you for clicking this read. In this post today, I’ll detail the Introduction to IRF740.The IRF740 is an N-channel power MOSFET used for extremely fast switching applications. It comes with a power dissipation of around 125W and can support load up to 400V. The maximum drain current of this device is 10A and drain-source capacitance is 1450pF.I suggest you read this post till the end as I’ll describe the complete Introduction to IRF740 covering datasheet, pinout, features, and applications.

Irf740 Mosfet Circuit Design

Introduction to IRF740

  • The IRF740 is an N-channel MOSFET that comes with 125W power dissipation. This is the power device dissipates during the working of this component.
  • This device is mainly used for fast switching applications and comes with ultra-low on-resistance of 0.55 Ohms which is the resistance between drain and source terminals.
  • The IRF740 contains three terminals named source, drain, and gate. Sometimes it is termed as a four-pin device when the body is also considered as its terminal.

My first look at a MOSFET, so just a basic circuit to test it out as a switch for a motor. See me on Facebook: https://goo.gl/H4u3UB. N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH MOSFET, IRF740 datasheet, IRF740 circuit, IRF740 data sheet: STMICROELECTRONICS, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. IRF740, IRF740 Datasheet, IRF740 MOSFET N-Channel Transistor Datasheet, buy IRF740 Transistor. IRF740, SiHF740 Power MOSFET, available from Vishay Intertechnology, a global manufacturer of electronic components.

  • The gate terminal is located between the source and drain terminals and is the area used for biasing of the device. While the drain terminal is the location from where electrons leave the channel and the source terminal is the location from where electrons enter the channel.
  • The MOSFETs are mainly categorized into two main types named N-channel MOSFET and P-channel MOSFET. This device IRF740 belongs to the N-channel MOSFET where electrons are responsible for the current flow inside the device as opposed to P-channel MOSFETs where holes are the charge carriers responsible for conductance inside the device.
  • It is important to note that the movement of the electrons is better than the movement of holes inside the MOSFET. The reason N-channel MOSFETs are preferred over P-channel MOSFETs in a range of applications.
  • The MOSFET operates in two modes i.e. depletion mode and enhancement mode.
  • The nature of electrons is opposite in both these modes in N-channel MOSFETs. During the enhancement mode when there is no voltage, there will be no current across the channel. However, when voltage is applied across the gate terminal, it increases the movement of electrons and thus increases the conductance.
  • On the other hand, during depletion mode, when there is no voltage applied across the gate terminal, there is current across the channel. However, when the voltage is applied across the gate terminal, it will decrease the movement of electrons and hence decrease the channel conductivity.

IRF740 Datasheet

Before you apply this device to your electrical project, it’s wise to go through the datasheet of the device that features the main characteristics of the component, helping you better understand the absolute maximum ratings of this device. Click the link below to download the datasheet of IRF740.

IRF740 Pinout

The following figure shows the pinout diagram of IRF740.The IRF740 comes with three terminals i.e. gate, drain, and source.Pin Description of IRF740
Pin No.Pin DescriptionPin Name
1Used for biasing the deviceGate
2Electrons leave the channel through this terminalDrain
3Electrons enter the channel through this terminalSource

IRF740 Features

Irf740 Mosfet Circuit Design

The following are the main features of IRF740.
  • Type = N-Channel Power MOSFET
  • Category = IRF series
  • Capable of fast switching
  • Power Dissipation = 125W
  • Continuous Drain Current (ID) = 10A
  • Gate threshold voltage (VGS-th) = 10V (limit = ±20V)
  • Drain to Source Breakdown Voltage = 400V
  • Drain Source Resistance (RDS) = 0.55 Ohms
  • Rise time is 27ns and fall time is 24nS
  • Junction temperature = 150C
  • Maximum Drain current = 10A
  • Drain-source capacitance = 1450pF
  • Available package = TO-220

IRF740 Applications

The IRF740 is employed in the following applications.
  • Used in USP
  • Employed in instrumentation projects
  • Used in switching applications
  • Used in embedded projects
  • Employed in Inverters
That’s all for today. Hope you’ve got a clear idea about this device IRF740. If you have any questions, you can pop your comment in the section below. I’m ready and happy to help you the best way I can. Feel free to share your valuable feedback and suggestions around the content we share so we keep sharing quality content tailored to your exact needs and requirements. Thank you for reading the article.


JLCPCB – Prototype 10 PCBs for $2 (For Any Color)

China’s Largest PCB Prototype Enterprise, 600,000+ Customers & 10,000+ Online Orders Daily
How to Get PCB Cash Coupon from JLCPCB: https://bit.ly/2GMCH9w

2SC1061 NPN Transistor Datasheet, Pinout, Features & Applications Previous
IRF2807 MOSFET Datasheet, Pinout, Features & Applications Next
-Website Author

Syed Zain Nasir

@syedzainnasir

I am Syed Zain Nasir, the founder of The Engineering Projects (TEP).I am a programmer since 2009 before that I just search things, make small projects and now I am sharing my knowledge through this platform.I also work as a freelancer and did many projects related to programming and electrical circuitry. My Google Profile+

Follow

Get Connected

Leave a Reply

Leave a Reply

You must be logged in to post a comment.

Today’s ever-growing market of the Electronics Industry is expanding to a greater extent and there has always been a special aspect of the Audio amplifiers in this industry, and for the amplification purpose, we often use Transistors for our circuit requirement.

Irf740 mosfet

We can use a different type of Transistors like we can use conventional BJTs (Bipolar Junction Transistors) like NPN or PNP type or we can use a special type of transistor MOSFETs (Metal Oxide Semiconductor Field Effect Transistor).

What is a MOSFET?

A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOSFET) is a field-effect transistor (FET with an insulated gate) where the voltage determines the conductivity of this Transistor. It is mainly used for switching or amplifying signals. The ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. MOSFETs are now even more common thanBJTs (bipolar junction transistors) in digital and analog circuits and it is widely used in audio amplifier circuits.

Now we will discuss some of the IRF Series MOSFETs which are given below.

Introduction to the IRF540 MOSFET

This is a special type of MOSFET which is of NPN type and it is generally operated in the enhanced mode. This MOSFET can perform a very fast switching than any other MOSFET, The input impedance of this MOSFET is also quite high as compared to other transistors in the market and it is very sensitive compared to them also.

The above picture gives a physical description of the IRF540 MOSFET.

The previous picture shows a test circuit of the MOSFET.

The MOSFET gate is triggered using an optocoupler to control the MOTOR, so with the small base current, the high voltage hardware can be controlled.

Features of IRF540 MOSFET

The various features of IRF540 MOSFET are listed below

  • The MOSFET provides a dynamic dV/dt rating.
  • The MOSFET is repetitive avalanche rated.
  • This MOSFET provides 175 degrees Celcius Operating Temperature.
  • This also provided fast switching.
  • There is the ease of paralleling in this MOSFET.
  • The Drive Requirement is very simple for this MOSFET.

Introduction to the IRF740 MOSFET

This is a special type of power MOSFET which can switch loads up to 400v and the MOSFET is of N-Channel type. This MOSFET also can switch loads that consume up to 10A it can be turned on by gate threshold voltage of 10V across the Gate and the Source pin.

Pinout Configuration of the IRF740

The simple pinout diagram for the IRF740 transistor is given below.

The above picture shows a simple pinout diagram of the IRF740 MOSFET

Features of IRF740 MOSFET

Irf740 Mosfet Datasheet

The various features of IRF740 MOSFET are listed below

  • The MOSFET provides a dynamic dV/dt rating.
  • The MOSFET is repetitive avalanche rated.
  • This MOSFET provides fast switching
  • The Drain to source resistance of the MOSFET is 0.55 Ohms.
  • The Rise time and fall time of the MOSFET is 27ns and 24ns
  • The Continuous drain current is 10A.
  • The drain to source breakdown voltage is 400V.

The alternatives available for the IRF740 in the market is IRFB13N50A, UF450A, SSF13N15.

Applications of IRF740

The various applications are listed below.

  • Ths MOSFET is used for high power switching applications.
  • Ths MOSFET is used for inverter circuits.
  • Ths MOSFET is used for DC to DC converters.
  • Ths MOSFET is used for speed controllers in motors.
  • Ths MOSFET is used for LED dimmers or flashers.

Introduction to the IRFP450 MOSFET

This is a dynamic dV/dt rating Transistor and this transistor is the best combination of fast switching , ruggedized device design, low-on resistance and cost effectiveness.

The Repetitive avalanche rated Isolated central mounting hole is there for fast switching and Ease of Paralleling and the driver requirements is also very simple and the Transistor is also a pb (Lead) free device.

Irf740 Datasheet Pdf

Features of IRFP450 MOSFET

The various features of IRFP450 MOSFET are listed below

  • The MOSFET provides a dynamic dV/dt rating.
  • The MOSFET is repetitive avalanche rated.
  • This MOSFET provides fast switching
  • The Drain to source resistance of the MOSFET is 0.55 Ohms.
  • The Rise time and fall time of the MOSFET is 27ns and 24ns

Applications of IRFP450

Irf740 Mosfet Equivalent

The various applications are listed below.

Irf734

  • It can be used to make a 600W MOSFET power amplifier.